SiC Ingot Laser Slicing System

SiC Ingot Laser Slicing System

The AOGEO SiC ingot laser slicing system serves the wafer-making stage of silicon carbide substrate manufacturing. Laser processing forms a separation layer at a defined depth inside the ingot, followed by controlled separation to obtain a wafer blank. The resulting blanks proceed to the specified grinding, polishing and inspection route.

• Applications: Plan slicing around crystal type, orientation, off-angle and ingot condition. Coordinate internal processing, wafer removal and preparation of the remaining ingot for the next processing cycle.
• Process inputs and outputs: Provide an SiC ingot with documented diameter, height, end-face condition and defect information. Outputs include separated wafer blanks, the remaining ingot and processing records for downstream material control.
• Configuration discussion: Match the laser and optical arrangement to material absorption and internal focusing. Discuss depth control, scanning motion, ingot fixtures, separation support, wafer handling and the interface to subsequent grinding equipment.
• Quality and acceptance: Measure blank thickness distribution, bow, cracks, surface condition and subsurface damage. Review material utilization together with the required finishing allowance, using agreed sampling, inspection methods and before-and-after records.
• RFQ information: Supply crystal type and off-angle, ingot dimensions, end-face images, target wafer thickness, the planned finishing route and representative samples. Include acceptance items, handling constraints, cleanliness expectations and traceability requirements.

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